PART |
Description |
Maker |
MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MMG05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
MTP5N40E |
N-Channel Enhancement-Mode Silicon Gate
|
New Jersey Semi-Conduct...
|
NTP22N06 |
N?Channel Enhancement?Mode Silicon Gate
|
ON Semiconductor
|
MTP4N80E |
N-Channel Enhancement-Mode Silicon Gate
|
New Jersey Semi-Conductor P...
|
SV401 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
MTP12N06EZL |
OBSOLETE - N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
SM703 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|